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| 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor (-80V, -1A) 2SB1260 / 2SB1181 / 2SB1241 !Features 1) High breakdown voltage and high current. BVCEO= -80V, IC=-1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. !External dimensions (Units : mm) 2SB1260 4.5+0.2 -0.1 1.60.1 2SB1181 1.50.3 6.50.2 5.1+0.2 -0.1 C0.5 2.3+0.2 -0.1 0.50.1 0.50.1 1.5 +0.2 -0.1 5.5+0.3 -0.1 4.0 0.3 2.5+0.2 -0.1 0.75 (1) (2) (3) 0.40.1 1.50.1 0.4+0.1 -0.05 0.650.1 0.9 1.00.2 0.550.1 2.30.2 2.30.2 1.00.2 0.40.1 1.50.1 0.50.1 3.00.2 !Structure Epitaxial planar type PNP silicon transistor (1) (2) (3) ROHM : MPT3 EIAJ : SC-62 Abbreviated symbol: BH (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 2SB1241 6.80.2 2.50.2 0.65Max. 1.0 0.50.1 (1) (2) (3) 2.54 2.54 1.05 0.450.1 14.50.5 4.40.2 0.9 ROHM : ATV (1) Emitter (2) Collector (3) Base * Denotes hFE !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP Limits -80 -80 -5 -1 -2 0.5 PC 2 1 10 Tj Tstg 150 -55~+150 W *2 *3 Unit V V V A(DC) A(Pulse) *1 2SB1260 Collector power dissipation 2SB1241, 2SB1181 2SB1181 Junction temperature Storage temperature W(Tc=25C) C C *1 Single pulse, Pw=100ms *2 When mounted on a 40x40x0.7 mm ceramic board. *3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. 2.5 9.50.5 0.9 1.5 2SB1260 / 2SB1181 / 2SB1241 Transistors !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio 2SB1260, 2SB1181 2SB1241 Transition frequency Output capacitance 2SB1260, 2SB1241 2SB1181 Cob fT Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE Min. -80 -80 -5 82 120 Typ. 100 100 25 Max. -1 -1 -0.4 390 390 Unit V V V A A V MHz MHz pF VCE=-5V, IE=50mA, f=30MHz VCE=-10V, IE=50mA, f=30MHz VCB=-10V, IE=0A, f=1MHz IC=-50A IC=-1mA IE=-50A VCB=-60V VEB=-4V IC/IB=-500mA/-50mA VCE=-3V, IC=-0.1A Conditions !Packaging specifications and hFE Package Code Type 2SB1260 2SB1241 2SB1181 hFE PQR QR PQR Basic ordering unit (pieces) TL 2500 Taping TV2 2500 T100 1000 hFE values are classified as follows : Item hFE P 82~180 Q 120~270 R 180~390 !Electrical characteristic curves -1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Ta=25C VCE=-5V Ta=25C -1.0 -0.45mA -0.8 -0.4mA -0.35mA -0.6 -0.3mA -0.25mA -0.4 -0.2mA -0.15mA -0.2 -0.1mA 1000 500 DC CURRENT GAIN : hFE Ta=25C -100 200 100 50 VCE=-3V -10 -1V -1 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) -0.05mA IB=0mA 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 20 10 -1 -2 -5 -10 -20 -50-100 -200-500-1000-2000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current 2SB1260 / 2SB1181 / 2SB1241 Transistors COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSITION FREQUENCY : fT (MHz) Ta=25C -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -1 -2 -5 -10 -20 -50-100-200-500-1000-2000 500 200 100 50 20 10 5 2 1 1 2 5 10 20 Ta=25C VCE=-5V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 1000 500 200 100 50 20 10 5 2 1 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 Ta=25C f=1MHz IE=0A IC/IB=20 10 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Gain bandwidth product vs. emitter current Fig.6 Collector output capacitance vs. collector-base voltage EMITTER INPUT CAPACITANCE : Cib (pF) 1000 500 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Ta=25C f=1MHz IC=0A 10 -2 IC Max. (Pulse) Ta=25C Single nonrepetitive pulse * 5 2 1 500m 200m 100m 50m 20m 10m 5m IC Max. (Pulse) PW -1 IC Max. -0.5 DC Ta=25C Single nonrepetitive pulse * =1 0m =1 PW PW 200 100 50 s 0 =1 ms m 00 =1 PW 00 DC m s s -0.2 -0.1 -0.05 -0.5 -1 -2 20 10 -0.1 -0.2 *Printed circuit board: -0.5 -1 -2 -5 -10 -5 -10 -20 -50 -100 2m 2 1m copper plating at least 1 cm . 0.1 0.2 0.5 1 2 5 10 20 50 100200 5001000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1.7 mm thick with collector EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig. 7 Emitter input capacitance vs. emitter-base voltage -5 COLLECTOR CURRENT : IC (A) Fig. 8 Safe operating area (2SB1260) Fig.9 Safe operating area (2SB1241) -2 -1 Ta=25C Single nonrepetitive pulse * PW -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SB1181) 0 =1 s 0m -50 -100 |
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